Manufacture of semiconductor element
文献类型：专利
| 作者 | TADA KUNIO; NAKANO YOSHIAKI |
| 发表日期 | 1988-06-08 |
| 专利号 | JP1988136625A |
| 著作权人 | TOKYO UNIV |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To form a semiconductor element of high quality in a high yield by determining the end point of a processing time based on the peak value or saturated value of a diffracted light from a substrate during developing and/or transferring process. CONSTITUTION:A substrate 1 is coated with a photoresist, and then exposed by a spherical wave 2-luminous flux interfering method by an He-Cd laser. After the exposure, the substrate 1 is disposed in a developing layer 2 filled with developer, and a laser light is irradiated from a laser light source 3 toward the substrate As the development is proceeded, a resist diffraction grating is formed on the substrate 1, and a diffracted light is generated. The light generated from the substrate 1 is detected by a photodetector 4, this photoelectric output signal is amplified by an amplifier 5, and output to a display unit 6 and an end point detector 7. The output of the detector 4 is sampled and stored at each time immediately after the start of the development, the sampled values are sequentially compared to detect the peak value or the saturated value of the diffraction light intensity, and output to a controller 8 at the time as an end point. Accordingly, if the etching is finished rapidly simultaneously when the diffracted light intensity is saturated, the best diffraction grating can be obtained. |
| 公开日期 | 1988-06-08 |
| 申请日期 | 1986-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88538]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO UNIV |
| 推荐引用方式 GB/T 7714 | TADA KUNIO,NAKANO YOSHIAKI. Manufacture of semiconductor element. JP1988136625A. 1988-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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