Manufacture of semiconductor laser element
文献类型：专利
| 作者 | TAKAMORI TAKESHI; FUKUNAGA TOSHIAKI; WATANABE KENJI |
| 发表日期 | 1992-10-28 |
| 专利号 | JP1992305990A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element, which easily and effectively traps current and ensures good yield, on the substrate surface having the stepped region having the plane (N11)A where N is under 5 by the molecular beam epitaxial growth method. CONSTITUTION:In the method of manufacturing a semiconductor laser element, a p-GaAs (100) substrate 11 having with a stepped portion having the plane (N11)A where N is under 5 is prepared. A current block layer 23 of the N-P inverse bias junction is formed on the stepped region of the substrate by the molecular beam epitaxial growth method in order to trap the light beam and the polarity of bipolar dopant is controlled to form an inverse bias structure for current trapping. |
| 公开日期 | 1992-10-28 |
| 申请日期 | 1991-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88548]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKAMORI TAKESHI,FUKUNAGA TOSHIAKI,WATANABE KENJI. Manufacture of semiconductor laser element. JP1992305990A. 1992-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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