Semiconductor laser
文献类型：专利
| 作者 | NARUI HIRONOBU; HIRATA SHOJI |
| 发表日期 | 1991-10-04 |
| 专利号 | JP1991225881A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a leakage current from being produced, the current triggering a thyristor, by holding an active layer in a recessed part with a first conductivity type cladding layer and a second conductivity type cladding layer vertically and laterally. CONSTITUTION:A title laser is constructed as a double hetero function structure in which a second conductivity type cladding layer 15 is epitaxially grown on an active layer 14 which is then buried in a first and the second conductivity type cladding layers 13, 15, and constructed as a buried type construction in which the double hetero junction structure is held at its opposite end surfaces directly with a current blocking layer 12 via the first conductivity type cladding layer 13. Accordingly, provided part of the active layer 14 is etched in itself, there is avoided a problem such as production of an oxide film, i.e., the actual layer 14 from being eroded in itself. Hereby, a thyristor is prevented from being switched on owing to a leakage current generated through a current blocking layer to improve optical output characteristics. |
| 公开日期 | 1991-10-04 |
| 申请日期 | 1990-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88550]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | NARUI HIRONOBU,HIRATA SHOJI. Semiconductor laser. JP1991225881A. 1991-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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