A1GaInP-based high-output red semiconductor laser device
文献类型：专利
| 作者 | HIROYAMA, RYOJI; INOUE, DAIJIRO; NOMURA, YASUHIKO; TAKEUCHI, KUNIO |
| 发表日期 | 2002-12-05 |
| 专利号 | US20020181528A1 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | A1GaInP-based high-output red semiconductor laser device |
| 英文摘要 | A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5° and not more than 20.0° is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5° and not more than 20.0°. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0°. |
| 公开日期 | 2002-12-05 |
| 申请日期 | 2002-03-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88553]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | HIROYAMA, RYOJI,INOUE, DAIJIRO,NOMURA, YASUHIKO,et al. A1GaInP-based high-output red semiconductor laser device. US20020181528A1. 2002-12-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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