半導体レ-ザ装置
文献类型：专利
| 作者 | 山本 敦也; 杉野 隆; 広瀬 正則; 吉川 昭男 |
| 发表日期 | 1996-05-31 |
| 专利号 | JP2523643B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To obtain a buried semiconductor laser in which an active region of narrow width can be formed by one crystal growth with good reproducibility by independently forming thin multilayer films made of double heterostructure including an active layer on a stripelike bump and at both side faces of the bump on a substrate having the bump. CONSTITUTION:Thin multilayer films 2-5 made of double heterostructure including an active layer 4 are formed on one conductivity type substrate 1 having a stripelike bump in the same order in a direction of a laminating direction at least up to the layer 5 directly above the layer 4 independently on the bump and at both side faces of the bump. Further, thin multilayer films 6-8 including the same conductivity type as that of the substrate 1 are formed in contact with both the side faces of the films 2-5 on the bump directly on the films 2-5 at both sides of the bump, and a reverse conductivity type layer 7 to that of the substrate 1 is formed in contact with the layer 6 having the same conductivity type as that of the substrate 1 and the uppermost layer 5 of the bump. For example, an n-type GaAs buffer layer 2, an n-type AlGaAs clad layer 3, an AlGaAs active layer 4 and a p-type AlGaAs clad layer 5 are sequen tially grown on an n-type GaAs substrate 1 formed with a reverse mesa bump. |
| 公开日期 | 1996-08-14 |
| 申请日期 | 1987-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88556]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 山本 敦也,杉野 隆,広瀬 正則,等. 半導体レ-ザ装置. JP2523643B2. 1996-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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