Manufacture of semiconductor laser
文献类型：专利
| 作者 | MATSUMOTO SHOHEI |
| 发表日期 | 1986-11-26 |
| 专利号 | JP1986267389A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve a production yield of a buried structure semiconductor laser by a method wherein a plurality of mesa stripes, whose widths are different from each other little by little, are formed and a current can be applied only to the mesa stripe which has the most suitable activation layer width. CONSTITUTION:The N-type AlxGa1-xAs first cladding layer 2, an N-type GaAs activation layer 3, the N-type AlxGa1-xAs second cladding layer 4 and an N-type GaAs cap layer 5 are formed on an N-type GaAs substrate 1 by epitaxial growth. A plurality of stripe masks 6, which have stripe widths different from each other, are formed and a plurality of mesa stripes B-D, which have activation layers with widths different from each other, are formed by etching. After the masks 6 are removed, high-resistance AlxGa1-xAs buried layers 7 are formed by buried epitaxial growth. One mesa stripe, for instance C, while has the most suitable activation layer width is determined and a stripe-shaped window is formed in an SiO2 insulation film 8, formed on a crystal surface, above the mesa stripe C and a positive type electrode 9 and a negative type electrode 10 are formed. |
| 公开日期 | 1986-11-26 |
| 申请日期 | 1985-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88557]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHOHEI. Manufacture of semiconductor laser. JP1986267389A. 1986-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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