Semiconductor laser device and method for manufacturing the same
文献类型：专利
| 作者 | TSUKADA, TOSHIHISA; UMEDA, JUNICHI; KAWAMURA, MASAO |
| 发表日期 | 1974 |
| 专利号 | US3783351 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for manufacturing the same |
| 英文摘要 | A semiconductor laser device includes an n-type direct transition III-V Group compound semiconductor substrate, another n-type III-V Group compound semiconductor epitaxial growth layer formed on a principal plane of said semiconductor substrate and having a wider forbidden gap than the same, a p-type impurity diffusion layer which reaches said semiconductor substrate through a center portion of said epitaxial growth layer and extends to a pair of opposing end faces of the hetero-junction element, an electrode provided on the surface of said p-type impurity diffusion layer, and another electrode provided on the surface opposite thereto of said semiconductor substrate, a pair of opposing end faces of the hetero-junction element, being parallel to each other and mirror polished, thereby forming a laser resonator. |
| 公开日期 | 1974 |
| 申请日期 | 1971-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88569]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | TSUKADA, TOSHIHISA,UMEDA, JUNICHI,KAWAMURA, MASAO. Semiconductor laser device and method for manufacturing the same. US3783351. 1974-01-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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