Liquid phase epitaxial growth
文献类型：专利
| 作者 | KUME ICHIROU; TANAKA TOSHIO |
| 发表日期 | 1983-10-25 |
| 专利号 | JP1983182224A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To easily control thickness of active layer by setting only the melt for active layer growth to supersaturated condition and adequately adjusting such supersaturated condition. CONSTITUTION:On the occasion of forming a clad layer, active clad layer and contact layer on a substrate using a slide boat by the epitaxial growth method, the melts of respective reservoirs have been set to the condition nearer to the saturating point at the growth temperature of each reservoir but the melt for growth of active layer is then set to the saturated condition for the epitaxial growth. When degree of oversaturation increases, thickness of active layer also becomes thicker, and when degree of oversaturation is set to 160% with reference to the saturation point, the active layer can be set as thin as about 0.1+ or -0.03mum. When an active layer is to be formed on a GaAs substrate, the GaAs of the supersaturated component exists as the core in the melt and it also grows up on the core during growth of the active layer because the growth of active layer is reduced. By this method, a thin active layer can be obtained easily through the control of thickness and a laser diode which operates on a lower threshold current can be formed. |
| 公开日期 | 1983-10-25 |
| 申请日期 | 1982-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88570]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | KUME ICHIROU,TANAKA TOSHIO. Liquid phase epitaxial growth. JP1983182224A. 1983-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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