Manufacture of semiconductor laser
文献类型：专利
| 作者 | TAMAMURA KOJI |
| 发表日期 | 1991-08-13 |
| 专利号 | JP1991185780A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To protect a semiconductor laser against distortion and to make it stable in characteristics by a method wherein an active layer and a first and a second clad layer sandwiching the active layer between them are epitaxially grown, and they are formed as a flat semiconductor layer respectively. CONSTITUTION:A groove 5 is provided to a semiconductor layer 3, and an active layer 7 and a first and a second clad layer, 6 and 8, sandwiching the active layer 7 between them are epitaxially grown in the groove 5 as a flat semiconductor layer respectively through a selective epitaxial growth method, whereby a semiconductor laser of this design can be protected against distortion. Moreover, the groove 5 is formed on a semiconductor layer 3 side, that is, an optical guide layer 2 side. By this setup, an active layer 7 itself, or a light emission operating region itself can be prevented from being exposed outside, so that it can be protected against deterioration and in result a semiconductor laser stable in characteristics can be obtained. |
| 公开日期 | 1991-08-13 |
| 申请日期 | 1989-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88580]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | TAMAMURA KOJI. Manufacture of semiconductor laser. JP1991185780A. 1991-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。