Semiconductor laser device
文献类型：专利
| 作者 | KANENO, NOBUAKI; KARAKIDA, SYOICHI |
| 发表日期 | 1997-07-01 |
| 专利号 | US5644587 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a semiconductor substrate, upper and lower cladding layers each having a composition lattice-matching with the semiconductor substrate, which lower cladding layer is disposed on the semiconductor substrate, and an active layer having a quantum well structure interposed between the upper and lower cladding layers. The active layer includes alternating well layers and barrier layers and outermost guide layers, and these are arranged so that two of the barrier layers and the guide layers sandwich each well layer. The guide layers lattice-match with the upper and lower cladding layers, and the well layer has a lattice constant different from lattice constants of the two layers sandwiching the well layer, thereby applying a tensile strain to the well layer. The tensile strain reduces the effective mass of holes in the quantum well active layer, resulting in low threshold current, high efficiency, and high-power output. |
| 公开日期 | 1997-07-01 |
| 申请日期 | 1995-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88588]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KANENO, NOBUAKI,KARAKIDA, SYOICHI. Semiconductor laser device. US5644587. 1997-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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