Semiconductor device
文献类型：专利
| 作者 | YOKOGAWA TOSHIYA; OGURA MOTOTSUGU |
| 发表日期 | 1988-08-18 |
| 专利号 | JP1988200586A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To suppress the occurrence of a misfitting dislocation, etc., by interposing a distorted superlattice layer which gradually varies in layer thickness between epitaxially grown layers. CONSTITUTION:Light confinement clad layers 2, 2', and an optical guide layer 3 are formed by epitaxial growth, and distorted superlattice layers 4, 4' made of II-IV semiconductors are formed, for example, by an organic metal vapor growth method. The layers 4, 4' are formed of ZnS, ZnS0.5Se0.5, and the layer 4 is formed by sequentially laminating from ZnS side with 100Angstrom of constant period ZnS (80Angstrom )-ZnSSe (20Angstrom ) distorted superlattice 10 pair, then ZnS (50Angstrom )- ZnSSe (50Angstrom ) distorted superlattice 10 pair, further ZnS (20Angstrom )-ZnSSe (80Angstrom ) distorted superlattice 10 pair. Further, the layer 4' is formed by reversely disposing the configuration of the layer 4 upside down. |
| 公开日期 | 1988-08-18 |
| 申请日期 | 1987-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88590]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOKOGAWA TOSHIYA,OGURA MOTOTSUGU. Semiconductor device. JP1988200586A. 1988-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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