Semiconductor laser device
文献类型：专利
| 作者 | FUKUNAGA, TOSHIAKI; WADA, MITSUGU |
| 发表日期 | 2001-10-10 |
| 专利号 | EP0920096B1 |
| 著作权人 | FUJI PHOTO FILM CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device comprises a GaAs substrate (1), a first cladding layer (2) having either one of p-type electrical conductivity and n-type electrical conductivity, a first optical waveguide layer (3), an Inx2Ga1-x2As1-y2Py2 first barrier layer (4), an Inx3Ga1-x3As1-y3Py3 quantum well active layer (5), an Inx2Ga1-x2As1-y2Py2 second barrier layer (6), a second optical waveguide layer (7), and a second cladding layer (8) having the other electrical conductivity, the layers being overlaid in this order on the substrate (1). Each cladding layer (2,8) and each optical waveguide layer (3,7) have compositions, which are lattice matched with the substrate (1). Each of the first and second barrier layers (4,6) has a tensile strain with respect to the substrate (1) and is set such that a total layer thickness of the barrier layers may be 10nm to 30nm, and a product of a strain quantity of the tensile strain and the total layer thickness may be 0.05nm to 0.2nm. The active layer (5) has a composition, which is lattice matched with the substrate (1), or a composition, which has a tensile strain of at most 0.003 with respect to the substrate (1). |
| 公开日期 | 2001-10-10 |
| 申请日期 | 1998-11-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88592]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI PHOTO FILM CO., LTD. |
| 推荐引用方式 GB/T 7714 | FUKUNAGA, TOSHIAKI,WADA, MITSUGU. Semiconductor laser device. EP0920096B1. 2001-10-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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