Semiconductor laser device
文献类型：专利
| 作者 | KUME MASAHIRO; ITO KUNIO; SHIBUYA TAKAO |
| 发表日期 | 1987-12-23 |
| 专利号 | JP1987296585A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To satisfy the requirement of high output-low noise in both recording and reproducing by forming the front surface in low reflectivity in a laser for recording and shaping the front surface in high reflectivity in a laser for reproducing. CONSTITUTION:Two-time liquid phase epitaxial growth is conducted onto a P-GaAs substrate 1, and multilayer structure is manufactured, and resonator end-surfaces are etched by using a sulfuric acid group etchant. Al2O3 9 having film thickness corresponding to a quarter wavelength and Si 10 having the same quarter-wavelength film thickness are applied through suputtering as end-surface coating films, and Al2O3 9 and Si 10 except sections as the resonator end-surfaces are removed through etching. Only Si is gotten rid of through etching so that the front surface of a laser for recording and the front surface of a photodetector are brought to low reflectivity at that time. An uppermost layer 11 is taken away for shaping an electrode, and an AuGeNi electrode 8 is evaporated, lifted off and allioyed. AuGeNi 8 is etched for electrically isolating elements and a groove is etched, and AuZn 7 is evaporated on the substrate side and used as on electrode. |
| 公开日期 | 1987-12-23 |
| 申请日期 | 1986-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88611]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KUME MASAHIRO,ITO KUNIO,SHIBUYA TAKAO. Semiconductor laser device. JP1987296585A. 1987-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。