Manufacture of semiconductor laser
文献类型：专利
| 作者 | ABE YUJI; OTSUKA KENICHI; SUGIMOTO HIROSHI; OISHI TOSHIYUKI; MATSUI TERUHITO |
| 发表日期 | 1990-04-09 |
| 专利号 | JP1990097084A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable the growth of crystal in only two processes by a method wherein a stripe-like waveguide layer is formed on a waveguide region and an active region, an active layer is made to grow, the active layer around the waveguide layer stripe is selectively removed, and the side of the waveguide layer is filled through a mass transport method. CONSTITUTION:A waveguide layer 2a whose forbidden bandwidth is small than that of a substrate is formed on a first conductivity type semiconductor substrate 1, and then the layer 2a is processed to form into two parallel mesa stripes and another mesa stripe connected to them. Next, an active layer 3, whose forbidden bandwidth is smaller than that of the waveguide layer, and a clad layer 4 and a contact layer 5, whose forbidden bandwidths are larger than that of the waveguide layer, are successively made to grow. Then, a stripe pattern broader than the stripe of the waveguide layer is formed, and the contact layer 5, the clad layer 4, and the active layer 3 are selectively removed. Then, when the substrate 1 is thermally treated in a phosphorus atmosphere at a high temperature, the constricted part at the lower part of a ridge is filled with a semiconductor layer 6 whose forbidden bandwidth is larger than that of the waveguide layer through mass transport. Lastly, the formation of a semiconductor laser of this design is completed through the formation of an SiO2 film 7 for an electrode stripe and the evaporation of a p-side electrode 8 and an n-side electrode 9. |
| 公开日期 | 1990-04-09 |
| 申请日期 | 1988-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ABE YUJI,OTSUKA KENICHI,SUGIMOTO HIROSHI,et al. Manufacture of semiconductor laser. JP1990097084A. 1990-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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