Manufacture of semiconductor laser
文献类型：专利
| 作者 | YONEDA KOJI; TOMINAGA KOJI |
| 发表日期 | 1992-12-22 |
| 专利号 | JP1992369882A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the shoulder of a stripe groove from protruding so as to protect a semiconductor laser against thermal degradation caused by the protrudent shoulder of the stripe groove by a method wherein secondary stripe grooves are provided to a block layer in parallel with a main stripe groove separate from it by a certain distance. CONSTITUTION:A base wafer 10 where an N-type GaAs block layer 2 is laminated on a P-type GaAs substrate 1 is prepared, a primary stripe groove 3a 2.8mum in width and 6mum in thickness are provided to the block layer 2 extending in the direction of a laser resonator by etching, and secondary stripe grooves 3b and 3b 6mum in width and 0.8mum in thickness are provided by etching onto both the sides of the primary groove 3a 5mum distant from the groove 3a extending in parallel with it. The flat surface of the block layer 2 is thermally etched at the liquid growth of a P-type clad layer 4, and a slope slightly inclined toward the primary stripe groove 3a is formed between the primary stripe groove 3a and the secondary groove 3b. That is, a protrusion is prevented from occurring on the shoulder of the primary groove 3a. |
| 公开日期 | 1992-12-22 |
| 申请日期 | 1991-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88616]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YONEDA KOJI,TOMINAGA KOJI. Manufacture of semiconductor laser. JP1992369882A. 1992-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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