Semiconductor laser
文献类型：专利
| 作者 | FURUYA AKIRA |
| 发表日期 | 1992-01-27 |
| 专利号 | JP1992023481A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent COD breakage, to restrain temperature of a chip and to enable carrier confinement, etc., with a simple means by forming a first clad layer of a p-type compound semiconductor material whose refraction factor is smaller than that of a second clad layer and whose energy band gap is larger than that of the second clad layer. CONSTITUTION:A material having a small refraction factor (n) and a large energy band gap E9 is used for a clad layer 13 at the side near a substrate 11, and the layer 13 is made thin to allow an active layer 14 to be close to the substrate 1 A material having a large refraction factor (n) and a small energy band gap E9 is used for a guide layer 15, which is made thick. Therefore, light confinement is carried out in the guide layer 15 and a clad layer 16 which are formed thick and the clad layer 13 which is formed thin transmits heat generated in the active layer 14 to the substrate 11 effectively. Thereby, it is possible to prevent COD breakage, to restrain temperature rise of a chip and to ensure carrier confinement, etc., with an extremely simple means. |
| 公开日期 | 1992-01-27 |
| 申请日期 | 1990-05-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88617]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FURUYA AKIRA. Semiconductor laser. JP1992023481A. 1992-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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