Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | YAMAGUCHI AKIO |
| 发表日期 | 1987-03-18 |
| 专利号 | JP1987061383A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce the threshold value and to respond at a high speed by forming a semiconductor layer such as a high resistance layer or a P-N superlattice layer on a flat portion out of a groove in a double channel type light emitting element to block a leakage current flowing to portions except the light emitting region. CONSTITUTION:An N-type InP substrate 1 of a substrate and clad layer, an InGaAsP layer 2 of active layer, and a P-type InP layer 3 of clad layer are formed as the first semiconductor multiple layer to form a light emitting region, and grooves 4, 5 are formed on both sides. A P-type InP layer 6, an N-type InP layer 7, a P-type InP layer 8 of buried layers, and a P type InGaAsP layer 9 of contacting layer are formed over the grooves 4, 5. An AlInAs layer 12 is formed as a current limiting semiconductor layer on the flat portion outside the grooves 4, 5 to suppress a leakage current flowing through P-N junction at both sides except the light emitting region. |
| 公开日期 | 1987-03-18 |
| 申请日期 | 1985-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88622]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI AKIO. Semiconductor laser and manufacture thereof. JP1987061383A. 1987-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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