Semiconductor laser
文献类型：专利
| 作者 | AYABE MASAAKI |
| 发表日期 | 1987-05-11 |
| 专利号 | JP1987101094A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser whose cladding layers, active layer and cap layer can be successively formed by a series of vapor phase deposition processes by providing a step-forming region on the surface of a substrate. CONSTITUTION:A protrusion 3, which is extended along the direction of a stripe and whose two ends are positioned inner than the end planes of a laser, is provided on the surface of a substrate The protrusion 3 serves as a means of forming steps in the respective layers formed by vapor phase deposition. The 1st cladding layer 4 is formed on the surface of the substrate 1 by vapor phase deposition. A part of the surface of the cladding layer 4 corresponding to the protrusion 3 rises. An active layer 5 is formed on the cladding layer 4 by vapor phase deposition. A part 6 of the active layer 5 corresponding to the protrusion 3 is higher than the other part and functions as an effective active region. The 2nd cladding layer 7 is formed on the active layer 5 by vapor phase deposition. A cap layer 8 is formed on the cladding layer 7 by vapor phase deposition. A part of a metal layer 10, which is formed on the cap layer 8 as an electrode, corresponding to the protrusion 3 also rises. A stripe electrode nearly corresponds to the rising part 1 |
| 公开日期 | 1987-05-11 |
| 申请日期 | 1985-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88626]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | AYABE MASAAKI. Semiconductor laser. JP1987101094A. 1987-05-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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