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文献类型：专利
| 作者 | WATANABE MASANOBU; YAJIMA HIROYOSHI; MUKAI SEIJI; ITO HIDEO |
| 发表日期 | 1993-09-16 |
| 专利号 | JP1993065072B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce the number of lithography processes at least from two to one by a method wherein, after left and right cladding layers are formed on both the sides of a rib structure, semiconductor layers which has a property of not growing on the upper cladding layer of the rib structure and a function of masking for introducing an impurity into the upper cladding layer are formed on the left and right cladding layers. CONSTITUTION:On both the left and right sides of a rib structure 5, p-type AlzGa1-zAs layers 16 and n-type AlzGa1-zAs layers 7 are successively built up. Then p-type GaAs semiconductor layers 20 which does not grow or a p-type AlxGa1-xAs layer 4 with the properly selected composition ratio as the upper cladding layer 4 of the rib structure 5 but grows only on the left and right n-type AlzGa1-zAs upper cladding layers 7 are built up. If a suitable impurity such as Zn is introduced into the whole surfaces of the semiconductor layers 20 between which an aperture 21 is formed in a self-alignment manner by a method such as diffusion, the p-type GaAs layers 20 can be practically utilized as diffusion masks and a required impurity diffused layer (Zn diffused layer) 22 can be formed only in the region mainly from the top surface of the upper cladding layer 4 of the rib structure 5 to the required depth. |
| 公开日期 | 1993-09-16 |
| 申请日期 | 1987-07-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88628]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | WATANABE MASANOBU,YAJIMA HIROYOSHI,MUKAI SEIJI,et al. -. JP1993065072B2. 1993-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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