Semiconductor device
文献类型：专利
| 作者 | KUBOTA MASAYUKI |
| 发表日期 | 1992-03-11 |
| 专利号 | JP1992076972A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To eliminate a need for adjusting a device and to realize a small size by a method wherein, by using a light waveguide layer executing a wave- front conversion operation, a light flux radiated from the back edge of a semiconductor laser element is returned to a laser-beam radiation point at the back edge of the semiconductor laser element. CONSTITUTION:A light flux 10 radiated from the back edge of a semiconductor laser element 1 is wave-guided, as diffused light, in a light-waveguide layer 7; it is converted into a parallel light flux by using a Fresnel lens 40. It is reflected by a mirror 60 which is fixed to a substrate 30 near a part faced with the semiconductor laser element 1 at the light-waveguide layer 7; it is returned to a laser-beam radiation point at the back edge of the semiconductor laser element It is required to control the error of the distance between the element 1 and the lens 40 within an error within the depth of focus of the lens 40. Therefore, when the lens 40 is formed, a photolithographic technique for a semiconductor wafer process is used to control the position of the lens 40 with high accuracy. When the back edge of the element 1 is brought into close contact with the layer 7 and is fixed to the substrate 30, the element 1 can be positioned. |
| 公开日期 | 1992-03-11 |
| 申请日期 | 1990-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88632]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUBOTA MASAYUKI. Semiconductor device. JP1992076972A. 1992-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。