中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Method for coating cleavage plane of semiconductor laser type device

文献类型:专利

作者HASHIMOTO JUNICHI
发表日期1992-10-19
专利号JP1992294589A
著作权人SUMITOMO ELECTRIC IND LTD
国家日本
文献子类发明申请
其他题名Method for coating cleavage plane of semiconductor laser type device
英文摘要PURPOSE:To provide a method of coating the cleavage plane of a semiconductor laser type device in a sort time through a simple process and, in addition, at a high manufacturing yield. CONSTITUTION:Semiconductor laser chip bars 1 are held by a fixing jig, with their cleavage planes 4a and 4b being exposed, and the jig is set in a rotary holder 10. A coating gas is blown upon the cleavage planes 4a and 4b while the bars 1 are rotated by rotating the holder 10. When the coating gas is blown upon the bars 1 in such way, protective films are uniformly formed on the planes 4a and 4b. When the holder 10 is rotated, the bars 1 are held in such a way that one electrode 2b is pressurized and the other electrode 2a is pressed against the internal wall surface of a supporting frame 6 by means of springs 7a and 7b.
公开日期1992-10-19
申请日期1991-03-25
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/88633]  
专题半导体激光器专利数据库
作者单位SUMITOMO ELECTRIC IND LTD
推荐引用方式
GB/T 7714
HASHIMOTO JUNICHI. Method for coating cleavage plane of semiconductor laser type device. JP1992294589A. 1992-10-19.

入库方式: OAI收割

来源:西安光学精密机械研究所

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