Method for coating cleavage plane of semiconductor laser type device
文献类型:专利
| 作者 | HASHIMOTO JUNICHI |
| 发表日期 | 1992-10-19 |
| 专利号 | JP1992294589A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for coating cleavage plane of semiconductor laser type device |
| 英文摘要 | PURPOSE:To provide a method of coating the cleavage plane of a semiconductor laser type device in a sort time through a simple process and, in addition, at a high manufacturing yield. CONSTITUTION:Semiconductor laser chip bars 1 are held by a fixing jig, with their cleavage planes 4a and 4b being exposed, and the jig is set in a rotary holder 10. A coating gas is blown upon the cleavage planes 4a and 4b while the bars 1 are rotated by rotating the holder 10. When the coating gas is blown upon the bars 1 in such way, protective films are uniformly formed on the planes 4a and 4b. When the holder 10 is rotated, the bars 1 are held in such a way that one electrode 2b is pressurized and the other electrode 2a is pressed against the internal wall surface of a supporting frame 6 by means of springs 7a and 7b. |
| 公开日期 | 1992-10-19 |
| 申请日期 | 1991-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88633] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO JUNICHI. Method for coating cleavage plane of semiconductor laser type device. JP1992294589A. 1992-10-19. |
入库方式: OAI收割
来源:西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
