Buried high resistance type semiconductor laser
文献类型：专利
| 作者 | KASAHARA KENICHI |
| 发表日期 | 1988-02-27 |
| 专利号 | JP1988046789A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried high resistance type semiconductor laser |
| 英文摘要 | PURPOSE:To accelerate the resistance increase of a buried layer thereby to obtain a high resistance buried type semiconductor laser having small efficiency of a threshold current by providing a bandlike structure having an active layer and a single hetero structure on an optical guide layer to be buried. CONSTITUTION:A bandlike structure having a single hetero junction structure made of an active layer 14 and a semiconductor layer 15 including a forbidden band width wider than the layer 14, and a double hetero junction formed on an optical guide layer 13 provided through a clad layer 12 on one main surface of a semiconductor substrate 1 with an Fe-doped buried layer 17 of a high resistance semiconductor including forbidden band width wider than the layer 14 provided on the side of the structure are formed. A leakage current can be reduced to the degree of no problem by doping Fe in the layer 17. Since a single traverse mode oscillation can be executed even if the width of the layer 14 is increased, the adverse influence of the Fe can be avoided. Thus, a high resistance buried type semiconductor laser which has high light emitting efficiency can be obtained. |
| 公开日期 | 1988-02-27 |
| 申请日期 | 1986-08-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88636]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KASAHARA KENICHI. Buried high resistance type semiconductor laser. JP1988046789A. 1988-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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