Semiconductor device and method of manufacture of the semiconductor device
文献类型：专利
| 作者 | YABUSAKI, KEIICHI; OHKUBO, MICHIO |
| 发表日期 | 2002-08-29 |
| 专利号 | US20020117680A1 |
| 著作权人 | YABUSAKI KEIICHI |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and method of manufacture of the semiconductor device |
| 英文摘要 | The semiconductor laser device has a lower clad layer, an active layer, an upper clad layer, a forward mesa forming layer, a contact layer and an insulating film, sequentially formed on the semiconductor substrate. The upper clad layer, the forward mesa forming layer, the contact layer and the insulating film form a ridge. The etching speed of the forward mesa forming layer is higher than that of the upper clad layer and lower than that of the contact layer. Because of such etching speeds, the ridge having a forward mesa structure is formed. |
| 公开日期 | 2002-08-29 |
| 申请日期 | 2001-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88640]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | YABUSAKI KEIICHI |
| 推荐引用方式 GB/T 7714 | YABUSAKI, KEIICHI,OHKUBO, MICHIO. Semiconductor device and method of manufacture of the semiconductor device. US20020117680A1. 2002-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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