Semiconductor laser element
文献类型：专利
| 作者 | KANEIWA SHINJI; KASAI SHUSUKE; MORIMOTO TAIJI; MIYAUCHI NOBUYUKI; HAYASHI HIROSHI |
| 发表日期 | 1990-08-29 |
| 专利号 | JP1990216885A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element which can be stably operated even in case of using at a high output and has high reliability by forming a loss waveguide having a width narrower than that of a multilayer structure except one end face vicinity region in the structure, providing a current blocking structure at the side face of the multilayer structure, and burying a lower refractive index than that of the active layer by a semiconductor layer. CONSTITUTION:A waveguide mechanism based on an effective refractive index difference is present at the center of a resonator. Thus, an astigmatic difference common to a semiconductor laser element having a loss waveguide mechanism is increased. However, the loss waveguide mechanism is not present or extremely weak, and a waveguide mechanism based on an actual refractive index difference between an active layer 14 and current blocking layers 17, 18 is present. Since a layer for absorbing a light is separated from a light emitting unit in a waveguide near the end face of the element, generation of heat due to light absorption at the end face is reduced. Since the layers 17, 18 are formed on a region except the region obtaining a gain, generation of Joule heat due to reactive current is reduced to provide high reliability. |
| 公开日期 | 1990-08-29 |
| 申请日期 | 1989-02-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88641]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KANEIWA SHINJI,KASAI SHUSUKE,MORIMOTO TAIJI,et al. Semiconductor laser element. JP1990216885A. 1990-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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