Semiconductor laser device
文献类型：专利
| 作者 | MAND, RANJIT S.; IJICHI, TETSURO; XU, JINGMING |
| 发表日期 | 1996-02-13 |
| 专利号 | US5491711 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device having a body with opposed facets and including an active region with aluminum diffused into the active region along the facets thereof. Adding aluminum to the portions of the active region along the facets increases the bandgap of the active region along the facets and provides a semiconductor laser device having an increased catastrophic optical damage (COD) level. The semiconductor laser device is produced by depositing a thin film of aluminum on the facets of the semiconductor laser device and then heat treating to cause diffusion of the aluminum film or phosphorus into the body of the semiconductor laser device along the facets thereof, thereby changing the composition of the semiconductor laser device body along the facets. Alternatively, phosphorus may be diffused into the body of the semiconductor laser device along the facets thereof. |
| 公开日期 | 1996-02-13 |
| 申请日期 | 1993-11-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88645]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | MAND, RANJIT S.,IJICHI, TETSURO,XU, JINGMING. Semiconductor laser device. US5491711. 1996-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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