Manufacture of semiconductor device
文献类型：专利
| 作者 | HATADA KENZOU |
| 发表日期 | 1983-11-24 |
| 专利号 | JP1983201389A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To facilitate the chip handling while reducing the damage thereto by a method wherein the electrode lead group is connected along the longitudinal side of a rectangular semiconductor element which is cleaved later. CONSTITUTION:An electrode such as Au-Zn etc. is provided on a surface 1a near the active region of a substrate 1 such as GaAs etc. conforming to a specified shape while another electrode such as Au etc. is provided on the entire back surface 1b. Another rectangular substrate 3 is formed by means of cleaving. The two electrodes are pressurized and heated for connection after locating on the comb-like lead terminals 6 on a resin film 7. Next, the substrate 3 is cut off by means of successive cleaving between the lead terminals 6. The chips 4 are placed on a metallic bed 8 to be measured by means of a probe 9 cutting off the acceptable terminals 6. In such a constitution, the chip handling may be facilitated reducing the damage thereto. |
| 公开日期 | 1983-11-24 |
| 申请日期 | 1982-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88648]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | HATADA KENZOU. Manufacture of semiconductor device. JP1983201389A. 1983-11-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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