中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者ONO YUUICHI; NAKATSUKA SHINICHI; KAJIMURA TAKASHI; KAYANE NAOKI
发表日期1985-07-06
专利号JP1985126880A
著作权人HITACHI SEISAKUSHO KK
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To obtain a semiconductor laser device having a stable transverse mode by making the forbidden band of a second layer as a semiconductor layer narrower than first and third layers, forming reverse conduction type fourth and fifth layers and forming a buried layer consisting of a sixth layer and a seventh layer on the fifth layer. CONSTITUTION:An N type clad layer 11 as a first semiconductor layer 12, an undoped active layer 13 as a second semiconductor layer, a P type clad layer 14 as a third semiconductor layer, an N type current constriction layer 15 as a fourth semiconductor layer and an N type layer 16 as a fifth semiconductor layer are grown on an N type GaAs substrate 11 through an MOCVD method in succession. The fifth semiconductor layer 16 is removed in a striped manner. The current constriction layer 15 as the fourth semiconductor layer is removed in the striped manner. A P type layer 17 as a sixth semiconductor layer and a P type layer 18 as a seventh semiconductor layer are grown in succession. A striped SiO2 window is formed on the P type layer 18, a P region 19 is shaped, and a p-side electrode 21 and an N-side electrode 20 are formed.
公开日期1985-07-06
申请日期1983-12-13
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/88649]  
专题半导体激光器专利数据库
作者单位HITACHI SEISAKUSHO KK
推荐引用方式
GB/T 7714
ONO YUUICHI,NAKATSUKA SHINICHI,KAJIMURA TAKASHI,et al. Semiconductor laser device. JP1985126880A. 1985-07-06.

入库方式: OAI收割

来源:西安光学精密机械研究所

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