Semiconductor laser device
文献类型：专利
| 作者 | ONO YUUICHI; NAKATSUKA SHINICHI; KAJIMURA TAKASHI; KAYANE NAOKI |
| 发表日期 | 1985-07-06 |
| 专利号 | JP1985126880A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device having a stable transverse mode by making the forbidden band of a second layer as a semiconductor layer narrower than first and third layers, forming reverse conduction type fourth and fifth layers and forming a buried layer consisting of a sixth layer and a seventh layer on the fifth layer. CONSTITUTION:An N type clad layer 11 as a first semiconductor layer 12, an undoped active layer 13 as a second semiconductor layer, a P type clad layer 14 as a third semiconductor layer, an N type current constriction layer 15 as a fourth semiconductor layer and an N type layer 16 as a fifth semiconductor layer are grown on an N type GaAs substrate 11 through an MOCVD method in succession. The fifth semiconductor layer 16 is removed in a striped manner. The current constriction layer 15 as the fourth semiconductor layer is removed in the striped manner. A P type layer 17 as a sixth semiconductor layer and a P type layer 18 as a seventh semiconductor layer are grown in succession. A striped SiO2 window is formed on the P type layer 18, a P region 19 is shaped, and a p-side electrode 21 and an N-side electrode 20 are formed. |
| 公开日期 | 1985-07-06 |
| 申请日期 | 1983-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88649]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | ONO YUUICHI,NAKATSUKA SHINICHI,KAJIMURA TAKASHI,et al. Semiconductor laser device. JP1985126880A. 1985-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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