中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser and method of manufacture

文献类型:专利

作者MORI, KENZO; KIMURA, TADASHI; YOSHITATU, KAWAMA; NOBUAKI, KANENO; TATUYA, KIMURA; YUJI, OKURA; HITOSHI, TADA
发表日期1996-10-09
专利号GB2299706A
著作权人MITSUBISHI DENKI KABUSHIKI KAISHA
国家英国
文献子类发明申请
其他题名Semiconductor laser and method of manufacture
英文摘要A semiconductor laser comprising: '''an n type semiconductor substrate 151; '''a stripe shape mesa including an n type lower cladding layer 152, an active layer 153, and a p type upper cladding layer 154 disposed on the substrate 151; and '''a p type semiconductor layer 156 disposed on opposite sides of the mesa structure and having a crystal surface 166 at opposite sides of said active layer 153, said crystal surface 166 forming an angle with the plane surface of said mesa, which angle is larger than an angle formed between a (111)B surface 165 of said p type semiconductor layer 156 and the plane surface of said mesa and smaller than 90{.
公开日期1996-10-09
申请日期1993-05-14
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/88652]  
专题半导体激光器专利数据库
作者单位MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
MORI, KENZO,KIMURA, TADASHI,YOSHITATU, KAWAMA,et al. Semiconductor laser and method of manufacture. GB2299706A. 1996-10-09.

入库方式: OAI收割

来源:西安光学精密机械研究所

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