Semiconductor laser element
文献类型：专利
| 作者 | UCHIDA KENJI; YAMASHITA SHIGEO; NAKATSUKA SHINICHI; KAJIMURA TAKASHI |
| 发表日期 | 1991-12-24 |
| 专利号 | JP1991292787A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent a leakage current from occurring in lateral direction in a clad layer outside a ridge stripe region by a method wherein a ridge stripe structure is provided to the surface of a semiconductor laser, and a semiconductor current constriction layer is provided to a region other than the ridge stripe region. CONSTITUTION:A stripe-like dielectric film is formed on the surface of an N-type GaAs substrate 1, and a ridge stripe is formed through etching. Thereafter, a first current constriction layer P-GaAs layer 2 is made to grow through a first organic metal vapor growth method, and an N-GaAs buffer layer 3, an N-Al0.5Ga0.5As clad layer 4, an undoped Al0.1Ga0.9As active layer 5, a P-Al0.5 Ga0.5As clad layer 6, and a P-GaAs cap layer 7 are successively grown in crystal through a second organic metal vapor method. Furthermore, an N-GaAs layer 8 serving as a second current constriction layer is selectively gown through a third organic metal vapor growth method, a stripe-like dielectric film left unremoved is removed, and lastly a P-GaAs buried layer 9 is made to grow in crystal. |
| 公开日期 | 1991-12-24 |
| 申请日期 | 1990-04-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88658]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UCHIDA KENJI,YAMASHITA SHIGEO,NAKATSUKA SHINICHI,et al. Semiconductor laser element. JP1991292787A. 1991-12-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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