Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | IKEDA KENJI; OOSAWA JIYUN; SUZAKI WATARU |
| 发表日期 | 1982-11-12 |
| 专利号 | JP1982184274A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To allow the obtention of transverse mode oscillation with high output and stability, by providing the second conducting type third layer in contact with the first conducting type first and second layers to form the second conducting type region in the neighborhood contacting with the third layer of the fist layer. CONSTITUTION:An n-GaAs layer 2, n-AlxGa1-xAs layer 4 are successively grown on an n-GaAs substrate 1 to remove the n-AlxGa1-xAs layer 4 of a desired region using a suitable mask material. Thereafter, said mask material is removed to grow a p-AlyGa1-yAs layer 3 containing Zn over the entire surface by liquid epitaxial method. Simultaneously, Zn is diffused from fusion or the layer 3 at high temperature of approx. 900 deg.C on the growth thereof to form a p-GaAs region 21 converted to p type in the layer 2 and p type regions 41A, 41B in the layers 4A, 4B. When selective etching of the layer 4, for example, reaction rate regulation etchant should be chosen in the orientation of crystal plane for the angle in illustration in an accute angle and the width W of an etching bottom close to nearly zero. |
| 公开日期 | 1982-11-12 |
| 申请日期 | 1981-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88660]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | IKEDA KENJI,OOSAWA JIYUN,SUZAKI WATARU. Semiconductor laser and manufacture thereof. JP1982184274A. 1982-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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