Production of semiconductor laser
文献类型：专利
| 作者 | NARUI HIRONOBU; HIRATA SHOJI |
| 发表日期 | 1992-04-24 |
| 专利号 | JP1992124890A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Production of semiconductor laser |
| 英文摘要 | PURPOSE:To produce a semiconductor laser device with high reliability and accuracy on the mass-production basis by forming a first conductivity type clad layer by the epitaxial growth method on the main surface of a semiconductor base layer, then forming a striped groove, sequentially forming a first conductivity type guide layer, an active layer, a second conductivity type guide layer and a clad layer in this groove by the epitaxial growth method and thereafter disconnecting the active layer from the other layers in the groove to form a quantum well structure. CONSTITUTION:A first conductivity type clad layer 2 is epitaxially grown on the main surface of a semiconductor base layer 1, a striped or a square groove 3 is formed on this epitaxial growth surface, a first conductivity type guide layer 4, an active layer 7, a second conductivity type guide layer 8 and a clad layer 9 are sequentially grown by the epitaxial growth method on this epitaxial growth surface, the active layer 7 having the width smaller than the stripe width or square width is disconnected from the other layers in the groove 3 and thereby a quantum well structure 11 is formed between the guide layers 4 and 8. The semiconductor base layer 1 has the 100 crystal surface and the groove 3 has the internal surface 3S having the angle of 45 deg. to the crystal axis or/to the direction along the crystal axis. |
| 公开日期 | 1992-04-24 |
| 申请日期 | 1990-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88670]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | NARUI HIRONOBU,HIRATA SHOJI. Production of semiconductor laser. JP1992124890A. 1992-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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