High power semiconductor device to output light with low-absorbtive facet window
文献类型：专利
| 作者 | CHUA, CHRISTOPHER L.; KNEISSL, MICHAEL A.; JOHNSON, NOBLE M.; KIESEL, PETER |
| 发表日期 | 2007-07-05 |
| 专利号 | US20070153857A1 |
| 著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | High power semiconductor device to output light with low-absorbtive facet window |
| 英文摘要 | A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results. |
| 公开日期 | 2007-07-05 |
| 申请日期 | 2005-12-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88674]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
| 推荐引用方式 GB/T 7714 | CHUA, CHRISTOPHER L.,KNEISSL, MICHAEL A.,JOHNSON, NOBLE M.,et al. High power semiconductor device to output light with low-absorbtive facet window. US20070153857A1. 2007-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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