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文献类型：专利
| 作者 | HIRAYAMA JUZO; KINOSHITA JUNICHI |
| 发表日期 | 1988-10-25 |
| 专利号 | JP1988053719B2 |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To protect the GaInAsP final layer and to prevent an impurity from diffusing by growing an impurity-doped InP layer on the surface of the final layer. CONSTITUTION:An N type InP buffer layer 2, an undoped InxGa1-xAs1-yPy active layer 3, a P type InP clad layer 4, a P type InuGa1-uAs1-vPv cap layer 5, and P type InP protective layer 6 are sequentially grown in liquid phase on an N type InP substrate Then, the remaining melt 7 is removed, and the layer 6 is removed by etching. Then, AnZn electrode 9 is deposited through an insulating film 8 opened at the layer 5, an AuGe electrode 10 is deposited on the lower surface of the substrate 1 to form a laser element. When the impurity density of the layer 6 is formed equal to the layer 5, the impurity diffusion from the layer 5 to the layer 6 is prevented. |
| 公开日期 | 1988-10-25 |
| 申请日期 | 1983-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88679]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | HIRAYAMA JUZO,KINOSHITA JUNICHI. -. JP1988053719B2. 1988-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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