Phase-locked type semiconductor laser array and its manufacture
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; FUKUNAGA TOSHIAKI; WATANABE NOZOMI |
| 发表日期 | 1990-02-01 |
| 专利号 | JP1990031485A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Phase-locked type semiconductor laser array and its manufacture |
| 英文摘要 | PURPOSE:To be oscillated in a 0 deg.-phase mode up to a high output by a method wherein a high coupling region which reduces an oscillation gain in a 180 deg.-phase mode and increases an oscillation gain in a 0 deg.-phase mode is provided in one part of each light waveguide. CONSTITUTION:A beam generated in an active layer 15 with reference to a semiconductor layer 19 creeps, via a second clad layer 17, to a part 19a which has not been made disordered, but does not creep to a disordered part 19b. Accordingly, a light waveguide is constituted of the following: the semiconductor layer 19a of a p-type Al0.5Ga0.5As/GaAs multiple-quantum-well structure; a part corresponding to the semiconductor layer 19a of the multiple-quantum-well structure of the second clad layer 17 and the active layer 15. In addition, wide parts 19c, 19d in the semiconductor layer 19a of the multiple-quantum-well structure become high coupling regions. Thereby, the coupling efficiency between adjacent light waveguides is increased in the high coupling regions; in addition, 180 deg.-phase modes are offset mutually and 0 deg. modes are increased mutually; accordingly, a gain of the 180 deg.-phase modes is reduced relatively and a gain of the 0 deg.-phase modes is increased. |
| 公开日期 | 1990-02-01 |
| 申请日期 | 1988-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88687]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,FUKUNAGA TOSHIAKI,WATANABE NOZOMI. Phase-locked type semiconductor laser array and its manufacture. JP1990031485A. 1990-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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