Multi-wavelength semiconductor laser
文献类型：专利
| 作者 | OKUDA MASAHIRO |
| 发表日期 | 1990-04-24 |
| 专利号 | JP1990110987A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi-wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To enable the same semiconductor laser to project laser rays of different wavelengths by a method wherein a required quantum level is selected from two or more quantum levels provided to the quantum well structure of an active layer and a loss characteristic is so controlled as to enable a laser oscillation to start at the required quantum level. CONSTITUTION:The following are successively laminated on an n-GaAs substrate 7 provided with a plane: an n-GaAs buffer layer 8; an n-AlGaAs clad layer 9; an n-AlGaAsSC (Separate Confinement) layer 10 whose Al composition decrease in a quadratic functional manner in a thicknesswise direction; a GaAs single quantum well type(SQW) layer 11; a p-AlGaAsSC (Separate Confinement) layer 12 whose Al composition increases in a quadratic functional manner in a thicknesswise direction; a p-AlGaAs clad layer 13; and a p-GaAs cap layer 15. The GaAs SQW layer 11 is composed of a well whose composition is GaAs and barriers, provided on both its sides, whose composition is Ga0.7Al0.3As and has two quantum levels, n=1 and n=2. If an oscillation starts when n is equal to one, laser rays 870nm in wavelength are projected, and laser rays 810nm in wavelength are projected when n is two. And, a loss characteristic is controlled through the injection of a current taking advantage of the reduction of a waveguide path in refractive index just under an electrode due to a plasma effect of injected carriers. |
| 公开日期 | 1990-04-24 |
| 申请日期 | 1988-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88688]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | OKUDA MASAHIRO. Multi-wavelength semiconductor laser. JP1990110987A. 1990-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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