Semiconductor laser element
文献类型：专利
| 作者 | OTSUKA NAOTAKA |
| 发表日期 | 1986-12-20 |
| 专利号 | JP1986290792A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain an available internal current constriction type semiconductor laser element having excellent characteristics by forming a non-doped GaAs optical absorption layer having a large absorption coefficient between an N-type GaAs current constriction layer and a P-type GaAlAs clad layer. CONSTITUTION:A non-doped GaAs optical absorption layer 7 having a large absorption coefficient is shaped between an N-type GaAs current constriction layer 2 and a P-type GaAlAs clad layer 3. Consequently, beams generated in a P-type GaAlAs active layer 4 are more absorbed to the absorption layer 7 even when preparing a laser having a wavelength such as 870nm. As a result, an effective index difference is shaped even in the direction parallel with a P-N junction, thus preventing the increase of an astigmatic difference. Accordingly, an available internal current constriction type semiconductor laser element having excellent characteristics is acquired. |
| 公开日期 | 1986-12-20 |
| 申请日期 | 1985-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88689]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | OTSUKA NAOTAKA. Semiconductor laser element. JP1986290792A. 1986-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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