中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Angled faceted emitter

文献类型:专利

作者BURCKEL, DAVID B.; BRUECK, STEVEN R. J.; MALLOY, KEVIN J.; STINTZ, ANDREAS
发表日期2007-03-08
专利号US20070053397A1
著作权人STC.UNM
国家美国
文献子类发明申请
其他题名Angled faceted emitter
英文摘要A semiconductor laser having an angled facet is provided. The semiconductor laser includes a first distributed Bragg reflector (DBR). The laser further includes an active region coupled to the first DBR, wherein the active region comprises a highly reflective facet and a partially reflective facet, and a second DBR coupled to the active region. The highly reflective facet, the partially reflective facet, the first DBR, and the second DBR form a laser cavity having a shape that is not rectangular. An angled facet emitter enables, for example, single vertical transverse mode operation of optically thick epitaxial gain regions.
公开日期2007-03-08
申请日期2006-01-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/88690]  
专题半导体激光器专利数据库
作者单位STC.UNM
推荐引用方式
GB/T 7714
BURCKEL, DAVID B.,BRUECK, STEVEN R. J.,MALLOY, KEVIN J.,et al. Angled faceted emitter. US20070053397A1. 2007-03-08.

入库方式: OAI收割

来源:西安光学精密机械研究所

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