Angled faceted emitter
文献类型:专利
作者 | BURCKEL, DAVID B.; BRUECK, STEVEN R. J.; MALLOY, KEVIN J.; STINTZ, ANDREAS |
发表日期 | 2007-03-08 |
专利号 | US20070053397A1 |
著作权人 | STC.UNM |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Angled faceted emitter |
英文摘要 | A semiconductor laser having an angled facet is provided. The semiconductor laser includes a first distributed Bragg reflector (DBR). The laser further includes an active region coupled to the first DBR, wherein the active region comprises a highly reflective facet and a partially reflective facet, and a second DBR coupled to the active region. The highly reflective facet, the partially reflective facet, the first DBR, and the second DBR form a laser cavity having a shape that is not rectangular. An angled facet emitter enables, for example, single vertical transverse mode operation of optically thick epitaxial gain regions. |
公开日期 | 2007-03-08 |
申请日期 | 2006-01-06 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/88690] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | STC.UNM |
推荐引用方式 GB/T 7714 | BURCKEL, DAVID B.,BRUECK, STEVEN R. J.,MALLOY, KEVIN J.,et al. Angled faceted emitter. US20070053397A1. 2007-03-08. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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