Monolithically integrated type semiconductor optical element and manufacture thereof
文献类型：专利
| 作者 | HASHIMOTO JUNICHI |
| 发表日期 | 1991-10-01 |
| 专利号 | JP1991222387A |
| 著作权人 | 住友電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Monolithically integrated type semiconductor optical element and manufacture thereof |
| 英文摘要 | PURPOSE:To enable a diffraction grating layer to be easily aligned with a multi-quantum well waveguide layer, to prevent laser rays from being reflected from an interface between the layers concerned, and to improve the layers in coupling efficiency by a method wherein a semiconductor layer other than an active layer is formed into an integral structure with the semiconductor layer of the multi-quantum well type optical modulator. CONSTITUTION:An N-InP lower clad layer 2 is formed on an N-InP semiconductor substrate 1, a GaInAsP active layer 3 is made to grow thereon, and a part of the active layer 3 to serve as a multi-quantum well-type optical modulator 12 is removed by etching. The InP buffer layer 4 is made to grow on the layers 2 and 3, and a GaInAs/AlInAs multi-quantum well waveguide layer 5 is grown thereon. Only the part of the layer 5 on the active layer 3 is doped through ion implantation, which is annealed to be turned into mixed crystal, and then a diffraction grating layer 6 is formed through ion etching. Therefore, the diffraction grating layer of a laser and the multi-quantum well waveguide layer of a multi-quantum well type optical modulator are prevented from deviating from each other in position, so that laser rays are hardly reflected from an interface between the layers concerned, in result loss caused by the insertion of the multi-quantum well type optical modulator becomes very small, so that an optical element becomes stable in performance as a whole. |
| 公开日期 | 1991-10-01 |
| 申请日期 | 1990-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88691]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 住友電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | HASHIMOTO JUNICHI. Monolithically integrated type semiconductor optical element and manufacture thereof. JP1991222387A. 1991-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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