Semiconductor laser device
文献类型：专利
| 作者 | OTOSHI SO; YAMAGUCHI KEN; NAGAOKA MIYO; KAYANE NAOKI |
| 发表日期 | 1988-11-18 |
| 专利号 | JP1988283088A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device whose aberration is low and whose output is high by installing a graded index distribution semiconductor layer whose refractive index is low in the central part and becomes large in accordance with a distance from the central part toward a film-thickness direction. CONSTITUTION:A first multilayer semiconductor is formed on a semiinsulating i-GaAs substrate 1 by an MBE method in such a way that i-GaAlAs 2, p- GaAlAs 3 whose mixed crystal ratio of AlAs is large in the central part and is continuously changed to be small in accordance with a distance from the central part, i-GaAlAs 2 and i-GaAs 4 are grown in succession. Then, a stepped part reaching the substrate 1 is formed on the right side by a dry etching method; a second miltilayer semiconductor containing a p-GaAlAs clad layer 5, an i-GaAlAs active layer 6, an n-GaAlAs clad layer 7 and an n-GaAs layer 8 is formed by an MBE method. Then, a groove 9 with a depth reaching the i-GaAs 4 is formed. |
| 公开日期 | 1988-11-18 |
| 申请日期 | 1987-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88707]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OTOSHI SO,YAMAGUCHI KEN,NAGAOKA MIYO,et al. Semiconductor laser device. JP1988283088A. 1988-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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