Semiconductor laser
文献类型：专利
| 作者 | ODAKAWA TETSUSHI |
| 发表日期 | 1989-02-08 |
| 专利号 | JP1989037889A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To conduct oscillation at a TM mode by forming an active layer having a lattice constant smaller than 4a clad layer and being brought to the state in which the active layer receives pressure resulting from the difference of lattice constants. CONSTITUTION:A semiconductor laser is composed of an N-type InP substrate 1, an N-type InP clad layer 2, a GaInAsP active layer 3, a P type InP clad layer 4, a GaInAsP cap layer 5, a P-type InP buried layer 6, an N-type InP buried layer 7, a P-type InP buried layer 8, a P side electrode 9 and an N side electrode 10. The lattic constant of the active layer 3 is made smaller than those of the clad layers 2, 4 by (0.5%), and the active layer 3 receives pressure in the spontaneous vertical direction at all times, and performs oscillation at a TM mode. |
| 公开日期 | 1989-02-08 |
| 申请日期 | 1987-08-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88708]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ODAKAWA TETSUSHI. Semiconductor laser. JP1989037889A. 1989-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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