Semiconductor laser device capable of suppressing leakage current in light emitting end surface and method for manufacturing the same
文献类型：专利
| 作者 | YOKOTA, MAKOTO |
| 发表日期 | 2003-05-15 |
| 专利号 | US20030091079A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device capable of suppressing leakage current in light emitting end surface and method for manufacturing the same |
| 英文摘要 | The present invention relates to a semiconductor laser device having a protective coating with a high-reliability formed on an end surface, and to a method for manufacturing the same. According to the present invention, in forming a semiconductor laser device, an electrode comprising Au is patterned so that the electrode does not exist in the vicinity of a light emitting end surface. Thereby, even when an Si film is formed on the light emitting end surface, the Si film is prevented from contacting with the light emitting end surface. In addition, after patterning the electrode, an insulating film (a silicon nitride film) is formed on the electrode for preventing the Si in the protective coating on the end surface from contacting with Au in the electrode, even when the Si film contacts with a surface of the electrode. |
| 公开日期 | 2003-05-15 |
| 申请日期 | 2002-11-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88710]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YOKOTA, MAKOTO. Semiconductor laser device capable of suppressing leakage current in light emitting end surface and method for manufacturing the same. US20030091079A1. 2003-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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