A semiconductor light emitting device
文献类型：专利
| 作者 | FUJIWARA, TAKAO; HANAMITSU, KIYOSHI; OHSAKA, SIGEO; ISHIKAWA, HIROSHI; TAKAGI, NOBUYUKI; SEGI, KATSUHARU |
| 发表日期 | 1983-10-12 |
| 专利号 | EP0025362A3 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A semiconductor light emitting device |
| 英文摘要 | Semiconductor lasers heretofore employed have no mechanism for stabilizing a lateral oscillation mode, and the light emitting region of the laser becomes wider as current increases. That is, the lateral oscillation mode is unstable. To avoid this problem a current rejecting layer 8 and an etch-back preventive layer 9 are added to a semiconductor laser provided with a clad layer 2 having a projecting portion 2G, for confining light from an active layer 3, and other portions from which light leaks. The thicknesses of certain layers, the relationships of forbidden band widths of the layers and their conductivity types are selected so that a current limit function and an optical guide function can be obtained, and 'the lateral oscillation mode can be stabilized. |
| 公开日期 | 1983-10-12 |
| 申请日期 | 1980-09-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88714]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | FUJIWARA, TAKAO,HANAMITSU, KIYOSHI,OHSAKA, SIGEO,et al. A semiconductor light emitting device. EP0025362A3. 1983-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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