Semiconductor laser element
文献类型：专利
| 作者 | NOGUCHI HIDEAKI |
| 发表日期 | 1991-02-14 |
| 专利号 | JP1991034386A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To enable a laser element to emit laser rays narrow in spectral width by a method wherein the band gap of an active layer is made larger than a certain value and thulium(Tm) is added to the active layer as impurity. CONSTITUTION:A semiconductor laser element is provided with a hetero-junction structure that the band gap of an active layer is narrower than those of clad layers which sandwich the active layer between them, where the band gap of the active layer is larger than 05eV and thulium(Tm) is made to dope the active layer as impurity. Electrons 17 occurred in an N-type clad region 12 and holes 15 induced in a P-type clad layer 15 are injected into the active layer 11 once and then transferred to a 4f optical level 13 of thulium(Tm), and an emission transition 14 takes place through the 4f orbital level of thulium(Tm) to emit light. Laser rays are 2mum in wavelength and emitted in a dynamic single mode. |
| 公开日期 | 1991-02-14 |
| 申请日期 | 1989-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88716]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NOGUCHI HIDEAKI. Semiconductor laser element. JP1991034386A. 1991-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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