Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | MIURA SHUICHI |
| 发表日期 | 1990-06-26 |
| 专利号 | JP1990165685A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To achieve excellent oscillation even in an adverse using environment by making a mesa part high by etching under the state wherein mask films covering the upper surface and the rear surface are present, and growing current blocking layers so that a p-n junction plane is present in the thickness of a one-conductivity type clad layer in the mesa part. CONSTITUTION:A mask film 6 which covers the side surface of a mesa part that is formed in a stripe shape is formed. Under the state wherein the mask films 5 and 6 covering the upper surface and the side surface of the mesa part are made to remain, a part of a one-conductivity type clad layer 2 and a part of a one-conductivity type semiconductor substrate 1 are further etched, and the mesa part is made high. Then, under the state wherein all the mask films 5 and 6 are made to remain, current blocking layers 7-9 are grown so that a p-n junction plane is present in the thickness of the one-conductivity type clad layer 2 in the mesa part. In this constitution, a current path is not formed at the interface between the mesa part and the current blocking layers. Excellent oscillation can be achieved even in an advance using environment. |
| 公开日期 | 1990-06-26 |
| 申请日期 | 1988-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88724]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MIURA SHUICHI. Manufacture of semiconductor light emitting device. JP1990165685A. 1990-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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