Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | HIRONAKA MISAO; KIMURA HIDE |
| 发表日期 | 1989-08-31 |
| 专利号 | JP1989217990A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To improve reliability and production yield of semiconductor laser devices, by incorporating an etching stopper layer having a specified thickness in a current blocking layer and forming a cap layer by liquid-phase epitaxy after formation of a groove serving as a current path. CONSTITUTION:When thicknesses of a lower clad layer 2, an active layer 3, an upper clad layer 4 and an AlpGa1-pAs etching stopper layer 11 are d1, d2, d3 and d5, respectively, proportions of Al to Ga in crystals of said layers are x, y, z and p, respectively, and thicknesses of a GaAs etching stopper layer 10 and a current blocking layer 5 are d4 and d6, respectively, the following relations should be satisfied: 0mum<=d1, 0.03mum<=d2<=0.15mum, 0.1mum<=d3<=0.6mum, 0.1mum<=d5<=0.2mum, 0.3<=x<=0.5, 0<=y<=0.2, 0.3<=z<=0.5, 0.4<=p<=0.5, d4<=0.1mum, and 0.2mum<=d6. When the thickness d4 of the AlpGa1-pAs etching stopper layer 11 and the thickness d4 of the GaAs etching stopper layer 10 are limited to d4<=0.1mum and 0.1mum<=d5<=0.2 mum, respectively, the reproducibility of manufacturing semiconductor laser devices can be improved substantially. |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88726]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HIRONAKA MISAO,KIMURA HIDE. Semiconductor laser device and manufacture thereof. JP1989217990A. 1989-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。