Semiconductor light-emitting element
文献类型：专利
| 作者 | SAKAI KAZUO; KUSHIRO YUKITOSHI; NISHIMURA KOUSUKE |
| 发表日期 | 1990-05-23 |
| 专利号 | JP1990133979A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To obtain a short wave length band semiconductor light-emitting element which emits blue color, green color, etc., by making a II-VI compound semiconductor as an active layer, allowing one part of II element to be substituted for on a clad layer, and constituting a semiconductor which lattice-matches to the active layer. CONSTITUTION:A short wave length band semiconductor light-emitting element consists of an n-side clad layer 2 consisting of n-Zn0.82Mn0.18S0.98Se0.01Te0.01, an active layer 3 consisting of a ZnS0.9Se0.05Te0.05, a p-side clad layer 4 consisting of p-Zn0.82Mn0.18S0.98 Se0.01Te0.01 an insulation film 5, and electrodes 6 and 7, where a substrate 1 consists of n-GaP. Lattice constants of the substrate 1, the clad layers 2 and 4, and the active layer 3 are nearly matched, band connection is made so that entrapment of electrons and positive holes can be performed effectively into the active layer 3 and entrapment of electrons and positive holes is performed fully. Thus, by substituting one part of Zn which is II element using transition metal elements such as Mn, Fe, Co, or Ni, the layers 2 and 4 at both sides of the active layer 3 nearly lattice match to the substrate 1 and a blue wave length band injection type short wave band semiconductor light-emitting element with a sufficient carrier entrapment can be obtained. |
| 公开日期 | 1990-05-23 |
| 申请日期 | 1988-11-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88727]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | SAKAI KAZUO,KUSHIRO YUKITOSHI,NISHIMURA KOUSUKE. Semiconductor light-emitting element. JP1990133979A. 1990-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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