Semiconductor laser device
文献类型：专利
| 作者 | KAJIMURA TAKASHI; YAMASHITA SHIGEO; OOUCHI HIROBUMI |
| 发表日期 | 1983-11-15 |
| 专利号 | JP1983196085A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To contain a plurality of semiconductor lasers and light receiving elements which can be independently modulated in the same chip by a method wherein the device is divided into two by providing grooves in the direction of laser resonator and vertical direction, and thus one is defined as the laser array part, and the other is defined as the light receiving element array part. CONSTITUTION:A double hetero-structure composed of an N type Ga1-yAlyAs clad layer 2, an undoped Ga1-xAlxAs active layer 3, a P type Ga1-yAlyAs layer 4, and an N type GaAs cap layer 5 is formed on the surface of an N type GaAs substrate Next, the window of an Al2O3 film is formed in the direction [110] of a wafer, and then P diffused regions 8 is formed by selectively diffusing Zn. While, the grooves 9 and 10 reaching the N type clad layer or the GaAs substrate are formed. The groove 9 divides the laser part and the light receiving part, and the groove 10 is an electric isolation groove. Finally, a P-side electrode 6 and an N-side electrode 7 are provided. |
| 公开日期 | 1983-11-15 |
| 申请日期 | 1982-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88728]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,YAMASHITA SHIGEO,OOUCHI HIROBUMI. Semiconductor laser device. JP1983196085A. 1983-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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