半導体レーザ素子
文献类型：专利
| 作者 | 兼岩 進治; 瀧口 治久; 吉田 智彦; 松井 完益 |
| 发表日期 | 1995-07-19 |
| 专利号 | JP1995066994B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To improve yield by coating a mesa stripe side surface containing an active layer for oscillating a laser limited by a hetero-junction with a P-type InP layer, etc. first and forming PNP structure when multilayer crystal structure with the active layer is grown, and etched and molded to a mesa type and buried growth is conducted to an etching section. CONSTITUTION:A P-type InP buffer layer 2, a non-doped InGaPAs active layer 3 (a luminescent wavelength of L3mum) and an N-type InP clad layer 4 are grown on a P-type (100) InP substrate 1 in succession. A photo-resist stripe is shaped in the direction, and a mesa-shaped stripe is formed through etching up to its midway of the buffer layer 2. Buried growth is conducted in order of a P-InP buffer layer 7, an N-InP current block layer 5, a P-InP current constriction layer 6 and an N-InP buried layer 8 along the mesa-shaped stripe. N side and P side electrodes are shaped onto the surface of the InP buried layer 8 and the back of the InP substrate 1, and the whole is cloven on a face, thus constituting a laser resonator. |
| 公开日期 | 1995-07-19 |
| 申请日期 | 1985-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88731]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 兼岩 進治,瀧口 治久,吉田 智彦,等. 半導体レーザ素子. JP1995066994B2. 1995-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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