Semiconductor laser with side mode suppression
文献类型：专利
| 作者 | RATOWSKY, RICHARD, P.; VERMA, ASHISH, K.; ENG, LARS |
| 发表日期 | 2007-03-28 |
| 专利号 | EP1766739A2 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with side mode suppression |
| 英文摘要 | Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region. |
| 公开日期 | 2007-03-28 |
| 申请日期 | 2005-06-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88732]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | RATOWSKY, RICHARD, P.,VERMA, ASHISH, K.,ENG, LARS. Semiconductor laser with side mode suppression. EP1766739A2. 2007-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。