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  4. 半导体激光器专利数据库
Manufacturing method of semiconductor laser with non-absorbing mirror structure

文献类型：专利

作者ISHIKAWA, MASAYUKI INTELLECTUAL PROPERTY DIVISION; OKUDA, HAJIME INTELLECTUAL PROPERTY DIVISION; SHIOZAWA, HIDEO INTELLECTUAL PROPERTY DIVISION; ITAYA, KAZUHIKO INTELLECTUAL PROPERTY DIVISION; WATANABE, YUKIO INTELLECTUAL PROPERTY DIVISION; SUZUKI, MARIKO INTELLECTUAL PROPERTY DIVISION; HATAKOSHI, GENICHI INTELLECTUAL PROPERTY DIVISION
发表日期1990-12-12
专利号EP0373933A3
著作权人KABUSHIKI KAISHA TOSHIBA
国家欧洲专利局
文献子类发明申请
其他题名Manufacturing method of semiconductor laser with non-absorbing mirror structure
英文摘要An InGaAℓP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate (12). The double-heterostructure section includes a first cladding layer (16) of n-type InGaAℓP, a non-doped InGaP active layer (80, 18), and a second cladding layer (20) of p-type InGaAℓP. An n-type GaAs current-blocking layer (24) having a stripe opening (26) and a p-type GaAs contact layer (32) are sequen­tially formed on the second cladding layer (20) by MOCVD crystal growth. A low-energy band gap region (18a) is defined in a central region of the active layer (18) located immediately below the stripe opening (26). A high-energy band gap region (18b) is defined in a peripheral region of the active layer (18) corresponding to a light output end portion of the laser and located immediately below the current-blocking layer (24). Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.
公开日期1990-12-12
申请日期1989-12-14
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/88733]  
专题半导体激光器专利数据库
作者单位KABUSHIKI KAISHA TOSHIBA
推荐引用方式
GB/T 7714		 ISHIKAWA, MASAYUKI INTELLECTUAL PROPERTY DIVISION,OKUDA, HAJIME INTELLECTUAL PROPERTY DIVISION,SHIOZAWA, HIDEO INTELLECTUAL PROPERTY DIVISION,et al. Manufacturing method of semiconductor laser with non-absorbing mirror structure. EP0373933A3. 1990-12-12.

入库方式： OAI收割

来源：西安光学精密机械研究所

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